RGW80TS65DHRC11

Part Number	RGW80TS65DHRC11
Manufacturer	ROHM Semiconductor
Other Part Numbers	846-RGW80TS65DHRC11-ND 846-RGW80TS65DHRC11
Description	IGBT TRNCH FIELD 650V 80A TO247N
Detailed Description	IGBT Trench Field Stop 650 V 80 A 214 W Through Hole TO-247N
Manufacturer Standard Lead Time	22 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors IGBTs Single IGBTs
Manufacturer		ROHM Semiconductor
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-247-3
Mounting Type		Through Hole
Operating Temperature		-40°C ~ 175°C (TJ)
Input Type		Standard
Reverse Recovery Time (trr)		92 ns
Vce(on) (Max) @ Vge, Ic		1.9V @ 15V, 40A
Supplier Device Package		TO-247N
IGBT Type		Trench Field Stop
Td (on/off) @ 25°C		42ns/148ns
Test Condition		400V, 20A, 10Ohm, 15V
Gate Charge		110 nC
Current - Collector (Ic) (Max)		80 A
Voltage - Collector Emitter Breakdown (Max)		650 V
Current - Collector Pulsed (Icm)		160 A
Power - Max		214 W

RESOURCE TYPE		LINK
Datasheets		RGW80TS65DHRC11
Product Training Modules		Insulated Gate Bipolar Transistors (IGBTs)
Product Training Modules		Industrial Motor Products: Part 1 - Power Devices/Gate Drivers
Product Training Modules		High-Power Devices for EV DC Fast-Charging Stations
HTML Datasheet		RGW80TS65DHR

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

Can ship immediately.

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