IV1Q12160T4

Part Number	IV1Q12160T4
Manufacturer	Inventchip Technology
Other Part Numbers	4084-IV1Q12160T4-ND 4084-IV1Q12160T4
Description	SIC MOSFET, 1200V 160MOHM, TO-24
Detailed Description	N-Channel 1200 V 20A (Tc) 138W (Tc) Through Hole TO-247-4
Manufacturer Standard Lead Time	12 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Inventchip Technology
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-247-4
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		SiCFET (Silicon Carbide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		20A (Tc)
Rds On (Max) @ Id, Vgs		195mOhm @ 10A, 20V
Power Dissipation (Max)		138W (Tc)
Vgs(th) (Max) @ Id		2.9V @ 1.9mA
Supplier Device Package		TO-247-4
Drive Voltage (Max Rds On, Min Rds On)		20V
Vgs (Max)		+20V, -5V
Drain to Source Voltage (Vdss)		1200 V
Gate Charge (Qg) (Max) @ Vgs		43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds		885 pF @ 800 V

RESOURCE TYPE		LINK
Datasheets		IV1Q12160T4

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
Moisture Sensitivity Level (MSL)		1 (Unlimited)
RoHS Status		ROHS3 Compliant

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