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VP0808L-G
  • image of transistor de efecto de campo de pequeña señal>VP0808L-G
  • image of transistor de efecto de campo de pequeña señal>VP0808L-G
VP0808L-G
Small Signal Field-Effect Transistors
Microchip Technology Inc
Microchip Techn
-
0
YES
image of transistor de efecto de campo de pequeña señal>VP0808L-G
image of transistor de efecto de campo de pequeña señal>VP0808L-G
VP0808L-G
VP0808L-G
Small Signal Field-Effect Transistors
Microchip Technology Inc
Microchip Techn
-
0
YES
TYPEDESCRIPTION
Source Content uid:VP0808L-G
Manufacturer Part Number:VP0808L-G
Rohs Code:Yes
Part Life Cycle Code:Active
Package Description:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:compliant
ECCN Code:EAR99
HTS Code:8541.29.00.95
Manufacturer:Microchip Technology Inc
Risk Rank:0.82
Additional Feature:HIGH INPUT IMPEDANCE
Configuration:SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:80 V
Drain Current-Max (ID):0.28 A
Drain-source On Resistance-Max:5 Ω
FET Technology:METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):25 pF
JEDEC-95 Code:TO-92
JESD-30 Code:O-PBCY-T3
JESD-609 Code:e3
Number of Elements:1
Number of Terminals:3
Operating Mode:ENHANCEMENT MODE
Operating Temperature-Max:150 °C
Operating Temperature-Min:-55 °C
Package Body Material:PLASTIC/EPOXY
Package Shape:ROUND
Package Style:CYLINDRICAL
Peak Reflow Temperature (Cel):NOT APPLICABLE
Polarity/Channel Type:P-CHANNEL
Power Dissipation-Max (Abs):1 W
Qualification Status:Not Qualified
Surface Mount:NO
Terminal Finish:Matte Tin (Sn)
Terminal Form:THROUGH-HOLE
Terminal Position:BOTTOM
Time@Peak Reflow Temperature-Max (s):NOT APPLICABLE
Transistor Application:SWITCHING
Transistor Element Material:SILICON

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